ZTX688BSTOA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZTX688BSTOA Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
E-Line-3, Formed Leads
Weight
453.59237mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~200°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
MATTE TIN
HTS Code
8541.29.00.75
Voltage - Rated DC
12V
Max Power Dissipation
1W
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
260
Current Rating
3A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZTX688B
Pin Count
3
JESD-30 Code
R-PSIP-W3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Transistor Application
SWITCHING
Gain Bandwidth Product
150MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
350mV
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
500 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
350mV @ 20mA, 3A
Collector Emitter Breakdown Voltage
12V
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
350mV
Collector Base Voltage (VCBO)
12V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
3A
Height
4.01mm
Length
4.77mm
Width
2.41mm
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
ZTX688BSTOA Product Details
ZTX688BSTOA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 500 @ 100mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 350mV, which allows maximum flexibilSingle BJT transistory in design.When VCE saturation is 350mV @ 20mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltages should be kept at 3A to achieve high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 3A current rating.Parts of this part have transition frequencies of 150MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
ZTX688BSTOA Features
the DC current gain for this device is 500 @ 100mA 2V a collector emitter saturation voltage of 350mV the vce saturation(Max) is 350mV @ 20mA, 3A the emitter base voltage is kept at 5V the current rating of this device is 3A a transition frequency of 150MHz
ZTX688BSTOA Applications
There are a lot of Diodes Incorporated ZTX688BSTOA applications of single BJT transistors.