2N3859A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
2N3859A Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
HTS Code
8541.21.00.95
Terminal Position
BOTTOM
Reach Compliance Code
unknown
JESD-30 Code
O-PBCY-T3
Number of Elements
1
Configuration
SINGLE
Power - Max
625mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1mA 1V
Current - Collector Cutoff (Max)
500nA ICBO
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
90MHz
Frequency - Transition
250MHz
RoHS Status
ROHS3 Compliant
2N3859A Product Details
2N3859A Overview
This device has a DC current gain of 100 @ 1mA 1V, which is the ratio between the collector current and the base current.In this part, there is a transition frequency of 90MHz.This device displays a 60V maximum voltage - Collector Emitter Breakdown.
2N3859A Features
the DC current gain for this device is 100 @ 1mA 1V a transition frequency of 90MHz
2N3859A Applications
There are a lot of Rochester Electronics, LLC 2N3859A applications of single BJT transistors.