Name: 2N3859A
Brand: Rochester Electronics, LLC
SKU: 2N3859A
Availability: InStock

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2N3859A

Manufacturer part number:2N3859A

Manufacturer:Rochester Electronics, LLC

Description:2N3859A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

Case Package:SOT-23

Datasheet:2N3859A Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
HTS Code	8541.21.00.95
Terminal Position	BOTTOM
Reach Compliance Code	unknown
JESD-30 Code	O-PBCY-T3
Number of Elements	1
Configuration	SINGLE
Power - Max	625mW
Transistor Application	SWITCHING
Polarity/Channel Type	NPN
Transistor Type	NPN
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1mA 1V
Current - Collector Cutoff (Max)	500nA ICBO
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	500mA
Transition Frequency	90MHz
Frequency - Transition	250MHz
RoHS Status	ROHS3 Compliant

2N3859A Product Details

2N3859A Overview

This device has a DC current gain of 100 @ 1mA 1V, which is the ratio between the collector current and the base current.In this part, there is a transition frequency of 90MHz.This device displays a 60V maximum voltage - Collector Emitter Breakdown.