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2N3859A

2N3859A

2N3859A

Rochester Electronics, LLC

2N3859A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

2N3859A Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
HTS Code 8541.21.00.95
Terminal Position BOTTOM
Reach Compliance Code unknown
JESD-30 Code O-PBCY-T3
Number of Elements 1
Configuration SINGLE
Power - Max 625mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA 1V
Current - Collector Cutoff (Max) 500nA ICBO
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 500mA
Transition Frequency 90MHz
Frequency - Transition 250MHz
RoHS Status ROHS3 Compliant
2N3859A Product Details

2N3859A Overview


This device has a DC current gain of 100 @ 1mA 1V, which is the ratio between the collector current and the base current.In this part, there is a transition frequency of 90MHz.This device displays a 60V maximum voltage - Collector Emitter Breakdown.

2N3859A Features


the DC current gain for this device is 100 @ 1mA 1V
a transition frequency of 90MHz

2N3859A Applications


There are a lot of Rochester Electronics, LLC 2N3859A applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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