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BCP49H6359XTMA1

BCP49H6359XTMA1

BCP49H6359XTMA1

Infineon Technologies

BCP49H6359XTMA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BCP49H6359XTMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Supplier Device Package PG-SOT223-4
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2007
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation1.5W
Base Part Number BCP49
Power - Max 1.5W
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 1V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 100μA, 100mA
Collector Emitter Breakdown Voltage60V
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 500mA
Frequency - Transition 200MHz
RoHS StatusROHS3 Compliant
In-Stock:2827 items

BCP49H6359XTMA1 Product Details

BCP49H6359XTMA1 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 10000 @ 100mA 5V.When VCE saturation is 1V @ 100μA, 100mA, transistor means Ic has reached transistors maximum value (saturated).This product comes in a PG-SOT223-4 device package from the supplier.Collector Emitter Breakdown occurs at 60VV - Maximum voltage.A maximum collector current of 500mA volts can be achieved.

BCP49H6359XTMA1 Features


the DC current gain for this device is 10000 @ 100mA 5V
the vce saturation(Max) is 1V @ 100μA, 100mA
the supplier device package of PG-SOT223-4

BCP49H6359XTMA1 Applications


There are a lot of Infineon Technologies BCP49H6359XTMA1 applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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