BCP49H6359XTMA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
BCP49H6359XTMA1 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Supplier Device Package
PG-SOT223-4
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
1.5W
Base Part Number
BCP49
Power - Max
1.5W
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
1V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
10000 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 100μA, 100mA
Collector Emitter Breakdown Voltage
60V
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
500mA
Frequency - Transition
200MHz
RoHS Status
ROHS3 Compliant
BCP49H6359XTMA1 Product Details
BCP49H6359XTMA1 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 10000 @ 100mA 5V.When VCE saturation is 1V @ 100μA, 100mA, transistor means Ic has reached transistors maximum value (saturated).This product comes in a PG-SOT223-4 device package from the supplier.Collector Emitter Breakdown occurs at 60VV - Maximum voltage.A maximum collector current of 500mA volts can be achieved.
BCP49H6359XTMA1 Features
the DC current gain for this device is 10000 @ 100mA 5V the vce saturation(Max) is 1V @ 100μA, 100mA the supplier device package of PG-SOT223-4
BCP49H6359XTMA1 Applications
There are a lot of Infineon Technologies BCP49H6359XTMA1 applications of single BJT transistors.