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BCP49H6359XTMA1

BCP49H6359XTMA1

BCP49H6359XTMA1

Infineon Technologies

BCP49H6359XTMA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BCP49H6359XTMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Supplier Device Package PG-SOT223-4
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 1.5W
Base Part Number BCP49
Power - Max 1.5W
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 1V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 100μA, 100mA
Collector Emitter Breakdown Voltage 60V
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 500mA
Frequency - Transition 200MHz
RoHS Status ROHS3 Compliant
BCP49H6359XTMA1 Product Details

BCP49H6359XTMA1 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 10000 @ 100mA 5V.When VCE saturation is 1V @ 100μA, 100mA, transistor means Ic has reached transistors maximum value (saturated).This product comes in a PG-SOT223-4 device package from the supplier.Collector Emitter Breakdown occurs at 60VV - Maximum voltage.A maximum collector current of 500mA volts can be achieved.

BCP49H6359XTMA1 Features


the DC current gain for this device is 10000 @ 100mA 5V
the vce saturation(Max) is 1V @ 100μA, 100mA
the supplier device package of PG-SOT223-4

BCP49H6359XTMA1 Applications


There are a lot of Infineon Technologies BCP49H6359XTMA1 applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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