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ZTX689BSTZ

ZTX689BSTZ

ZTX689BSTZ

Diodes Incorporated

ZTX689BSTZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZTX689BSTZ Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3, Formed Leads
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Operating Temperature -55°C~200°C TJ
Packaging Tape & Box (TB)
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 25V
Max Power Dissipation 1W
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Current Rating 3A
Frequency 150MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZTX689B
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Transistor Application SWITCHING
Gain Bandwidth Product 150MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 400 @ 2A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 2A
Collector Emitter Breakdown Voltage 20V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage 500mV
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 5V
hFE Min 400
Continuous Collector Current 3A
Height 4.01mm
Length 4.77mm
Width 2.41mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.366136 $3.366136
10 $3.175600 $31.756
100 $2.995849 $299.5849
500 $2.826273 $1413.1365
1000 $2.666295 $2666.295
ZTX689BSTZ Product Details

ZTX689BSTZ Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 400 @ 2A 2V DC current gain.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 10mA, 2A.Continuous collector voltages of 3A should be maintained to achieve high efficiency.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Its current rating is 3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In this part, there is a transition frequency of 150MHz.A maximum collector current of 3A volts is possible.

ZTX689BSTZ Features


the DC current gain for this device is 400 @ 2A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 150MHz

ZTX689BSTZ Applications


There are a lot of Diodes Incorporated ZTX689BSTZ applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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