Welcome to Hotenda.com Online Store!

logo
userjoin
Home

TIP115TU

TIP115TU

TIP115TU

Rochester Electronics, LLC

TIP115TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

TIP115TU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 2W
Transistor Type PNP - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A 4V
Current - Collector Cutoff (Max) 2mA
Vce Saturation (Max) @ Ib, Ic 2.5V @ 8mA, 2A
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 2A
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.42000 $0.42
500 $0.4158 $207.9
1000 $0.4116 $411.6
1500 $0.4074 $611.1
2000 $0.4032 $806.4
2500 $0.399 $997.5
TIP115TU Product Details

TIP115TU Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 1A 4V DC current gain.When VCE saturation is 2.5V @ 8mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Product comes in TO-220-3 supplier package.The device has a 60V maximal voltage - Collector Emitter Breakdown.

TIP115TU Features


the DC current gain for this device is 1000 @ 1A 4V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the supplier device package of TO-220-3

TIP115TU Applications


There are a lot of Rochester Electronics, LLC TIP115TU applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News