TIP115TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
TIP115TU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
2W
Transistor Type
PNP - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 1A 4V
Current - Collector Cutoff (Max)
2mA
Vce Saturation (Max) @ Ib, Ic
2.5V @ 8mA, 2A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
2A
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.42000
$0.42
500
$0.4158
$207.9
1000
$0.4116
$411.6
1500
$0.4074
$611.1
2000
$0.4032
$806.4
2500
$0.399
$997.5
TIP115TU Product Details
TIP115TU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 1A 4V DC current gain.When VCE saturation is 2.5V @ 8mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Product comes in TO-220-3 supplier package.The device has a 60V maximal voltage - Collector Emitter Breakdown.
TIP115TU Features
the DC current gain for this device is 1000 @ 1A 4V the vce saturation(Max) is 2.5V @ 8mA, 2A the supplier device package of TO-220-3
TIP115TU Applications
There are a lot of Rochester Electronics, LLC TIP115TU applications of single BJT transistors.