ZTX788BSTZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
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ZTX788BSTZ Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
E-Line-3, Formed Leads
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~200°C TJ
Packaging
Tape & Box (TB)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated DC
-15V
Max Power Dissipation
1W
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
260
Current Rating
-3A
Frequency
100MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZTX788B
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
15V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
500 @ 10mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
450mV @ 10mA, 2A
Collector Emitter Breakdown Voltage
15V
Transition Frequency
100MHz
Collector Base Voltage (VCBO)
15V
Emitter Base Voltage (VEBO)
5V
Height
4.01mm
Length
4.77mm
Width
2.41mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,000
$0.53607
$1.07214
ZTX788BSTZ Product Details
ZTX788BSTZ Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 500 @ 10mA 2V.When VCE saturation is 450mV @ 10mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 5V allows for a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -3A.There is a transition frequency of 100MHz in the part.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
ZTX788BSTZ Features
the DC current gain for this device is 500 @ 10mA 2V the vce saturation(Max) is 450mV @ 10mA, 2A the emitter base voltage is kept at 5V the current rating of this device is -3A a transition frequency of 100MHz
ZTX788BSTZ Applications
There are a lot of Diodes Incorporated ZTX788BSTZ applications of single BJT transistors.