30A02MH-TL-H datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
30A02MH-TL-H Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
Max Power Dissipation
600mW
Pin Count
3
Power - Max
600mW
Halogen Free
Halogen Free
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
-220mV
Max Collector Current
700mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 10mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
220mV @ 10mA, 200mA
Collector Emitter Breakdown Voltage
30V
Frequency - Transition
520MHz
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
-5V
hFE Min
200
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.328000
$0.328
10
$0.309434
$3.09434
100
$0.291919
$29.1919
500
$0.275395
$137.6975
1000
$0.259807
$259.807
30A02MH-TL-H Product Details
30A02MH-TL-H Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 10mA 2V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 220mV @ 10mA, 200mA.Emitter base voltages of -5V can achieve high levels of efficiency.Maximum collector currents can be below 700mA volts.
30A02MH-TL-H Features
the DC current gain for this device is 200 @ 10mA 2V the vce saturation(Max) is 220mV @ 10mA, 200mA the emitter base voltage is kept at -5V
30A02MH-TL-H Applications
There are a lot of ON Semiconductor 30A02MH-TL-H applications of single BJT transistors.