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ZXTN4002ZTA

  • ZXTN4002ZTA
  • ZXTN4002ZTA

ZXTN4002ZTA

ZXTN4002ZTA

Diodes Incorporated

ZXTN4002ZTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXTN4002ZTA Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 130.492855mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Max Power Dissipation 1.5W
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZXTN4002
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Power - Max 1.5W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 200mV
Current - Collector Cutoff (Max) 50nA ICBO
Collector Emitter Breakdown Voltage 100V
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 7V
hFE Min 60
Height 1.6mm
Length 4.6mm
Width 2.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.503797 $0.503797
10 $0.475280 $4.7528
100 $0.448377 $44.8377
500 $0.422998 $211.499
1000 $0.399054 $399.054
ZXTN4002ZTA Product Details

ZXTN4002ZTA Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 200mV.Emitter base voltages of 7V can achieve high levels of efficiency.Breakdown input voltage is 100V volts.The maximum collector current is 1A volts.

ZXTN4002ZTA Features


the DC current gain for this device is 100 @ 150mA 200mV
the emitter base voltage is kept at 7V

ZXTN4002ZTA Applications


There are a lot of Diodes Incorporated ZXTN4002ZTA applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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