PBHV9115Z,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBHV9115Z,115 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
73
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
1.4W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
115MHz
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
PBHV9115
Pin Count
4
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.4W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
115MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
150V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA 10V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
300mV @ 100mA, 500mA
Collector Emitter Breakdown Voltage
150V
Transition Frequency
115MHz
Max Breakdown Voltage
150V
Collector Base Voltage (VCBO)
200V
Emitter Base Voltage (VEBO)
-6V
hFE Min
100
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,000
$0.21450
$0.2145
2,000
$0.19800
$0.396
5,000
$0.18700
$0.935
10,000
$0.18150
$1.815
PBHV9115Z,115 Product Details
PBHV9115Z,115 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 10V DC current gain.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 100mA, 500mA.The emitter base voltage can be kept at -6V for high efficiency.In the part, the transition frequency is 115MHz.A breakdown input voltage of 150V volts can be used.During maximum operation, collector current can be as low as 1A volts.
PBHV9115Z,115 Features
the DC current gain for this device is 100 @ 100mA 10V the vce saturation(Max) is 300mV @ 100mA, 500mA the emitter base voltage is kept at -6V a transition frequency of 115MHz
PBHV9115Z,115 Applications
There are a lot of Nexperia USA Inc. PBHV9115Z,115 applications of single BJT transistors.