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PBHV9115Z,115

PBHV9115Z,115

PBHV9115Z,115

Nexperia USA Inc.

PBHV9115Z,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBHV9115Z,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 73
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 1.4W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 115MHz
[email protected] Reflow Temperature-Max (s) 30
Base Part Number PBHV9115
Pin Count 4
JESD-30 Code R-PDSO-G4
Number of Elements 1
Element Configuration Single
Power Dissipation 1.4W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 115MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 150V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 100mA, 500mA
Collector Emitter Breakdown Voltage 150V
Transition Frequency 115MHz
Max Breakdown Voltage 150V
Collector Base Voltage (VCBO) 200V
Emitter Base Voltage (VEBO) -6V
hFE Min 100
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $0.21450 $0.2145
2,000 $0.19800 $0.396
5,000 $0.18700 $0.935
10,000 $0.18150 $1.815
PBHV9115Z,115 Product Details

PBHV9115Z,115 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 10V DC current gain.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 100mA, 500mA.The emitter base voltage can be kept at -6V for high efficiency.In the part, the transition frequency is 115MHz.A breakdown input voltage of 150V volts can be used.During maximum operation, collector current can be as low as 1A volts.

PBHV9115Z,115 Features


the DC current gain for this device is 100 @ 100mA 10V
the vce saturation(Max) is 300mV @ 100mA, 500mA
the emitter base voltage is kept at -6V
a transition frequency of 115MHz

PBHV9115Z,115 Applications


There are a lot of Nexperia USA Inc. PBHV9115Z,115 applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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