2SB1202S-TL-E Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 140 @ 100mA 2V DC current gain.A collector emitter saturation voltage of -700mV allows maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 100mA, 2A.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, it can handle voltages as low as 50V volts.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.

2SB1202S-TL-E Features

the DC current gain for this device is 140 @ 100mA 2V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 100mA, 2A
the emitter base voltage is kept at 6V

2SB1202S-TL-E Applications

There are a lot of ON Semiconductor 2SB1202S-TL-E applications of single BJT transistors.

• Inverter
• Driver
• Muting
• Interface