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ZX5T849GTA

ZX5T849GTA

ZX5T849GTA

Diodes Incorporated

ZX5T849GTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZX5T849GTA Datasheet

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2003
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 30V
Max Power Dissipation 3W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 7A
Frequency 140MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZX5T849
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 3W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 140MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 7A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A 1V
Current - Collector Cutoff (Max) 20nA ICBO
Vce Saturation (Max) @ Ib, Ic 220mV @ 300mA, 6.5A
Collector Emitter Breakdown Voltage 30V
Transition Frequency 140MHz
Collector Emitter Saturation Voltage 220mV
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 7V
hFE Min 20
Continuous Collector Current 7A
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.893114 $0.893114
10 $0.842560 $8.4256
100 $0.794868 $79.4868
500 $0.749875 $374.9375
1000 $0.707430 $707.43
ZX5T849GTA Product Details

ZX5T849GTA Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 1A 1V.This design offers maximum flexibility with a collector emitter saturation voltage of 220mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 220mV @ 300mA, 6.5A.Single BJT transistor is essential to maintain the continuous collector voltage at 7A to achieve high efficiency.With the emitter base voltage set at 7V, an efficient operation can be achieved.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 7A current rating.The part has a transition frequency of 140MHz.Breakdown input voltage is 30V volts.Maximum collector currents can be below 7A volts.

ZX5T849GTA Features


the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of 220mV
the vce saturation(Max) is 220mV @ 300mA, 6.5A
the emitter base voltage is kept at 7V
the current rating of this device is 7A
a transition frequency of 140MHz

ZX5T849GTA Applications


There are a lot of Diodes Incorporated ZX5T849GTA applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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