ZX5T849GTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
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ZX5T849GTA Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2003
JESD-609 Code
e3
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated DC
30V
Max Power Dissipation
3W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
7A
Frequency
140MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZX5T849
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
3W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
140MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
7A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1A 1V
Current - Collector Cutoff (Max)
20nA ICBO
Vce Saturation (Max) @ Ib, Ic
220mV @ 300mA, 6.5A
Collector Emitter Breakdown Voltage
30V
Transition Frequency
140MHz
Collector Emitter Saturation Voltage
220mV
Max Breakdown Voltage
30V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
7V
hFE Min
20
Continuous Collector Current
7A
Height
1.65mm
Length
6.7mm
Width
3.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.893114
$0.893114
10
$0.842560
$8.4256
100
$0.794868
$79.4868
500
$0.749875
$374.9375
1000
$0.707430
$707.43
ZX5T849GTA Product Details
ZX5T849GTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 1A 1V.This design offers maximum flexibility with a collector emitter saturation voltage of 220mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 220mV @ 300mA, 6.5A.Single BJT transistor is essential to maintain the continuous collector voltage at 7A to achieve high efficiency.With the emitter base voltage set at 7V, an efficient operation can be achieved.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 7A current rating.The part has a transition frequency of 140MHz.Breakdown input voltage is 30V volts.Maximum collector currents can be below 7A volts.
ZX5T849GTA Features
the DC current gain for this device is 100 @ 1A 1V a collector emitter saturation voltage of 220mV the vce saturation(Max) is 220mV @ 300mA, 6.5A the emitter base voltage is kept at 7V the current rating of this device is 7A a transition frequency of 140MHz
ZX5T849GTA Applications
There are a lot of Diodes Incorporated ZX5T849GTA applications of single BJT transistors.