2SA1182-Y,LF Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 100mA 1V.This design offers maximum flexibility with a collector emitter saturation voltage of -250mV.A VCE saturation (Max) of 250mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).A constant collector voltage of -500mA is necessary for high efficiency.Keeping the emitter base voltage at -5V can result in a high level of efficiency.This device can take an input voltage of 30V volts before it breaks down.When collector current reaches its maximum, it can reach 500mA volts.

2SA1182-Y,LF Features

the DC current gain for this device is 120 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -5V

2SA1182-Y,LF Applications

There are a lot of Toshiba Semiconductor and Storage 2SA1182-Y,LF applications of single BJT transistors.

• Muting
• Interface
• Driver
• Inverter