ZXTP5401GTA Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 60 @ 10mA 5V.As it features a collector emitter saturation voltage of -500mV, it allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 5mA, 50mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can be broken down at a voltage of 150V volts.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.

ZXTP5401GTA Features

the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

ZXTP5401GTA Applications

There are a lot of Diodes Incorporated ZXTP5401GTA applications of single BJT transistors.

• Muting
• Interface
• Inverter
• Driver