2SC4135S-TL-E Overview

In this device, the DC current gain is 140 @ 100mA 5V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 400mV, it allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.

2SC4135S-TL-E Features

the DC current gain for this device is 140 @ 100mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 100mA, 1A
the emitter base voltage is kept at 6V

2SC4135S-TL-E Applications

There are a lot of ON Semiconductor 2SC4135S-TL-E applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter