ZX5T953GTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
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ZX5T953GTA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Termination
SMD/SMT
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-100V
Max Power Dissipation
3W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-5A
Frequency
125MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZX5T953
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
3W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
125MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1A 1V
Current - Collector Cutoff (Max)
20nA ICBO
Vce Saturation (Max) @ Ib, Ic
340mV @ 400mA, 4A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
125MHz
Collector Emitter Saturation Voltage
-340mV
Max Breakdown Voltage
100V
Collector Base Voltage (VCBO)
140V
Emitter Base Voltage (VEBO)
-7V
hFE Min
15
Continuous Collector Current
-5A
Height
1.65mm
Length
6.7mm
Width
3.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,000
$0.47925
$0.47925
2,000
$0.45090
$0.9018
5,000
$0.43200
$2.16
ZX5T953GTA Product Details
ZX5T953GTA Overview
This device has a DC current gain of 100 @ 1A 1V, which is the ratio between the collector current and the base current.As it features a collector emitter saturation voltage of -340mV, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 340mV @ 400mA, 4A.Maintaining the continuous collector voltage at -5A is essential for high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -7V.This device has a current rating of -5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.The part has a transition frequency of 125MHz.Breakdown input voltage is 100V volts.The maximum collector current is 5A volts.
ZX5T953GTA Features
the DC current gain for this device is 100 @ 1A 1V a collector emitter saturation voltage of -340mV the vce saturation(Max) is 340mV @ 400mA, 4A the emitter base voltage is kept at -7V the current rating of this device is -5A a transition frequency of 125MHz
ZX5T953GTA Applications
There are a lot of Diodes Incorporated ZX5T953GTA applications of single BJT transistors.