ZXMN10A11GTC

new-10%

Manufacturer part number:ZXMN10A11GTC

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 100V 1.7A SOT223

Case Package:SOT-23

Datasheet:ZXMN10A11GTC Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	1A
[email protected] Reflow Temperature-Max (s)	40
JESD-30 Code	R-PDSO-G4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.9W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	350m Ω @ 2.6A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	274pF @ 50V
Current - Continuous Drain (Id) @ 25°C	1.7A Ta
Gate Charge (Qg) (Max) @ Vgs	5.4nC @ 10V
Rise Time	1.7ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	3.5 ns
Turn-Off Delay Time	7.4 ns
Continuous Drain Current (ID)	1.7A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	1.9A
Drain-source On Resistance-Max	0.6Ohm
Drain to Source Breakdown Voltage	100V
RoHS Status	RoHS Compliant
Lead Free	Lead Free