ZXMN10B08E6TA

new-10%

Manufacturer part number:ZXMN10B08E6TA

Manufacturer:Diodes Incorporated

Description:Trans MOSFET N-CH 100V 1.9A 6-Pin SOT-23 T/R

Case Package:SOT-23

Datasheet:ZXMN10B08E6TA Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6
Number of Pins	6
Weight	14.996898mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	230mOhm
Terminal Finish	Matte Tin (Sn)
Additional Feature	LOW THRESHOLD
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	1.9A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	6
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.1W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.7W
Turn On Delay Time	2.9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	230m Ω @ 1.6A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	497pF @ 50V
Current - Continuous Drain (Id) @ 25°C	1.6A Ta
Gate Charge (Qg) (Max) @ Vgs	9.2nC @ 10V
Rise Time	2.1ns
Drive Voltage (Max Rds On,Min Rds On)	4.3V 10V
Vgs (Max)	±20V
Fall Time (Typ)	2.1 ns
Turn-Off Delay Time	12.1 ns
Continuous Drain Current (ID)	1.9A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	9A
Height	1.3mm
Length	3.1mm
Width	1.8mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free