SSM3K324R,LF Overview

Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 190pF @ 30V.This device has a continuous drain current (ID) of [4A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.Its overall power consumption can be reduced by using drive voltage (1.8V 4.5V).

SSM3K324R,LF Features

a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of 30V voltage

SSM3K324R,LF Applications

There are a lot of Toshiba Semiconductor and Storage
SSM3K324R,LF applications of single MOSFETs transistors.

• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit