SUD50P06-15-GE3

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SUD50P06-15-GE3

Manufacturer part number:SUD50P06-15-GE3

Manufacturer:Vishay Siliconix

Description:SUD50P06-15-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available on our website

Case Package:SOT-23

Datasheet:SUD50P06-15-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	30
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	2.5W Ta 113W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Case Connection	DRAIN
Turn On Delay Time	15 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	15m Ω @ 17A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4950pF @ 25V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	165nC @ 10V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	175 ns
Continuous Drain Current (ID)	-50A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-60V
Pulsed Drain Current-Max (IDM)	80A
Max Junction Temperature (Tj)	150°C
Height	2.507mm
RoHS Status	ROHS3 Compliant