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SUD50P06-15-GE3

  • SUD50P06-15-GE3
  • SUD50P06-15-GE3

SUD50P06-15-GE3

SUD50P06-15-GE3

Vishay Siliconix

SUD50P06-15-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available on our website

SOT-23

SUD50P06-15-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) 30
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 2.5W Ta 113W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4950pF @ 25V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 165nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 175 ns
Continuous Drain Current (ID) -50A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -60V
Pulsed Drain Current-Max (IDM) 80A
Max Junction Temperature (Tj) 150°C
Height 2.507mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
SUD50P06-15-GE3 Product Details

SUD50P06-15-GE3 Description


The SUD50P06-15-GE3 is a P-Channel 60 V (D-S) MOSFET. When it comes to metal-oxide-semiconductor field-effect transistors (MOSFETs), a power MOSFET is a special kind that is made to manage large amounts of power. Its key benefits are high switching speed and good efficiency at low voltages when compared to other power semiconductor devices like an insulated-gate bipolar transistor (IGBT) or a thyristor. It shares an accessible gate with the IGBT that makes it simple to drive. They occasionally have low gain to the point where a gate voltage greater than the voltage under control is required.



SUD50P06-15-GE3 Features


  • TrenchFET® power MOSFET

  • Low gate drive power

  • Fast switching speed

  • Easy advanced paralleling capability

  • Wide bandwidth, ruggedness

  • Easy drive

  • Simple biasing

  • Ease of application

  • Ease of repair



SUD50P06-15-GE3 Applications


  • Load switch

  • Switch Mode Power Supplies (SMPS)

  • Power-Over-Ethernet (PoE)

  • Solar inverters.

  • Automotive applications

  • Switch, buck and synchronous rectification

  • Uninterruptible Power Supplies (UPS)

  • Small motor control


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