FDMC86520DC

new-10%

Manufacturer part number:FDMC86520DC

Manufacturer:ON Semiconductor

Description:MOSFET N CH 60V 17A POWER33

Case Package:SOT-23

Datasheet:FDMC86520DC Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 week ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Weight	32.13mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	Dual Cool™, PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
JESD-30 Code	S-PDSO-N5
Number of Elements	1
Power Dissipation-Max	3W Ta 73W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	73W
Case Connection	DRAIN
Turn On Delay Time	18 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6.3m Ω @ 17A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2790pF @ 30V
Current - Continuous Drain (Id) @ 25°C	17A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs	40nC @ 10V
Rise Time	6.6ns
Drive Voltage (Max Rds On,Min Rds On)	8V 10V
Vgs (Max)	±20V
Fall Time (Typ)	4 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	40A
JEDEC-95 Code	MO-240BA
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0063Ohm
Drain to Source Breakdown Voltage	60V
Height	950μm
Length	3.3mm
Width	3.3mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free