ZXMN4A06GTA datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Diodes Incorporated stock available on our website
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ZXMN4A06GTA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
17 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2002
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Resistance
75mOhm
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
40V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
6.7A
[email protected] Reflow Temperature-Max (s)
40
Pin Count
4
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
2W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2W
Case Connection
DRAIN
Turn On Delay Time
2.55 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
50m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
770pF @ 40V
Current - Continuous Drain (Id) @ 25°C
5A Ta
Gate Charge (Qg) (Max) @ Vgs
18.2nC @ 10V
Rise Time
4.45ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
7.35 ns
Turn-Off Delay Time
28.61 ns
Continuous Drain Current (ID)
7A
Threshold Voltage
1V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
5A
Drain to Source Breakdown Voltage
40V
Pulsed Drain Current-Max (IDM)
22A
Max Junction Temperature (Tj)
150°C
Height
1.8mm
Length
6.7mm
Width
3.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.443404
$0.443404
10
$0.418306
$4.18306
100
$0.394628
$39.4628
500
$0.372291
$186.1455
1000
$0.351218
$351.218
ZXMN4A06GTA Product Details
ZXMN4A06GTA Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 770pF @ 40V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.Drain-source breakdown voltage is?the VDS at which a specified value of ID flows, with VGS=40V.?And this device has 40V drain to source breakdown voltage.The drain current is the?maximum continuous current the device can conduct, and the drain current of this device is 5A.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 28.61 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 22A.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 2.55 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 1V.This device reduces its overall power consumption by using drive voltage (4.5V 10V).
ZXMN4A06GTA Features
a continuous drain current (ID) of 7A a drain-to-source breakdown voltage of 40V voltage the turn-off delay time is 28.61 ns based on its rated peak drain current 22A. a threshold voltage of 1V
ZXMN4A06GTA Applications
There are a lot of Diodes Incorporated ZXMN4A06GTA applications of single MOSFETs transistors.
PFC stages, hard switching PWM stages and resonant switching