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IPB80N08S207ATMA1

IPB80N08S207ATMA1

IPB80N08S207ATMA1

Infineon Technologies

IPB80N08S207ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IPB80N08S207ATMA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series OptiMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 26 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7.1m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 4700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Rise Time 50ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 61 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 75V
Drain-source On Resistance-Max 0.0071Ohm
Avalanche Energy Rating (Eas) 810 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $18.123612 $18.123612
10 $17.097747 $170.97747
100 $16.129950 $1612.995
500 $15.216933 $7608.4665
1000 $14.355598 $14355.598
IPB80N08S207ATMA1 Product Details

IPB80N08S207ATMA1                                  DESCRIPTION


Metal Oxide Silicon Field Effect Transistors commonly known as MOSFETs are electronic devices used to switch or amplify voltages in circuits. It is a voltage controlled device and is constructed by three terminals. 


IPB80N08S207ATMA1                                  Features

• N-channel - Enhancement mode

• Automotive AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green package (lead free)

• Ultra low Rds(on)

• 100% Avalanche tested


IPB80N08S207ATMA1                                 APPLICATIONS 

Instrumentation and Test Equipment

n High Resolution Data Acquisition Systems

n Weigh Scales

n Precision Battery Monitors

n Precision Regulators

n Medical Equipment


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