ZXMP3A16GTA datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Diodes Incorporated stock available on our website
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ZXMP3A16GTA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
17 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Resistance
45mOhm
Additional Feature
LOW THRESHOLD
Subcategory
Other Transistors
Voltage - Rated DC
-30V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-7.5A
[email protected] Reflow Temperature-Max (s)
40
Pin Count
4
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
2W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2W
Case Connection
DRAIN
Turn On Delay Time
3.8 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
45m Ω @ 4.2A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1022pF @ 15V
Current - Continuous Drain (Id) @ 25°C
5.4A Ta
Gate Charge (Qg) (Max) @ Vgs
29.6nC @ 10V
Rise Time
6.5ns
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
21.4 ns
Turn-Off Delay Time
37.1 ns
Continuous Drain Current (ID)
-5.4A
Threshold Voltage
-1V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
-30V
Max Junction Temperature (Tj)
150°C
Height
1.8mm
Length
6.7mm
Width
3.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,000
$0.44550
$0.4455
2,000
$0.41580
$0.8316
5,000
$0.39501
$1.97505
10,000
$0.38016
$3.8016
25,000
$0.37800
$9.45
ZXMP3A16GTA Product Details
ZXMP3A16GTA Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1022pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of -5.4A.With a drain-source breakdown voltage of -30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -30V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 37.1 ns.A turn-on delay time of 3.8 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has -1V threshold voltage.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
ZXMP3A16GTA Features
a continuous drain current (ID) of -5.4A a drain-to-source breakdown voltage of -30V voltage the turn-off delay time is 37.1 ns a threshold voltage of -1V a 30V drain to source voltage (Vdss)
ZXMP3A16GTA Applications
There are a lot of Diodes Incorporated ZXMP3A16GTA applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Load switching
DC-to-DC converters
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,