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ZXTN19020CFFTA

ZXTN19020CFFTA

ZXTN19020CFFTA

Diodes Incorporated

ZXTN19020CFFTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXTN19020CFFTA Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-3 Flat Leads
Number of Pins 3
Weight 48.789529mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation2W
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Frequency 150MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation2W
Power - Max 1.5W
Gain Bandwidth Product150MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 7A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 175mV @ 280mA, 7A
Collector Emitter Breakdown Voltage20V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage30mV
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 65V
Emitter Base Voltage (VEBO) 7V
Continuous Collector Current 7A
Turn On Time-Max (ton) 252ns
Height 1mm
Length 3mm
Width 1.7mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:11000 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.606829$0.606829
10$0.572480$5.7248
100$0.540075$54.0075
500$0.509505$254.7525
1000$0.480665$480.665

ZXTN19020CFFTA Product Details

ZXTN19020CFFTA Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 100mA 2V.With a collector emitter saturation voltage of 30mV, it offers maximum design flexibility.A VCE saturation (Max) of 175mV @ 280mA, 7A means Ic has reached its maximum value(saturated).Single BJT transistor is recommended to keep the continuous collector voltage at 7A in order to achieve high efficiency.Emitter base voltages of 7V can achieve high levels of efficiency.In this part, there is a transition frequency of 150MHz.An input voltage of 20V volts is the breakdown voltage.A maximum collector current of 7A volts can be achieved.

ZXTN19020CFFTA Features


the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 30mV
the vce saturation(Max) is 175mV @ 280mA, 7A
the emitter base voltage is kept at 7V
a transition frequency of 150MHz

ZXTN19020CFFTA Applications


There are a lot of Diodes Incorporated ZXTN19020CFFTA applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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