2SC2812N6-CPA-TB-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SC2812N6-CPA-TB-E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
LIFETIME (Last Updated: 1 week ago)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
Tin (Sn)
Max Power Dissipation
200mW
Pin Count
3
Power - Max
200mW
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
150mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 1mA 6V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
50V
Frequency - Transition
100MHz
Collector Base Voltage (VCBO)
55V
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.266428
$0.266428
10
$0.251347
$2.51347
100
$0.237120
$23.712
500
$0.223698
$111.849
1000
$0.211036
$211.036
2SC2812N6-CPA-TB-E Product Details
2SC2812N6-CPA-TB-E Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 1mA 6V DC current gain.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 5mA, 50mA.Collector current can be as low as 150mA volts at its maximum.
2SC2812N6-CPA-TB-E Features
the DC current gain for this device is 200 @ 1mA 6V the vce saturation(Max) is 500mV @ 5mA, 50mA
2SC2812N6-CPA-TB-E Applications
There are a lot of ON Semiconductor 2SC2812N6-CPA-TB-E applications of single BJT transistors.