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2SC2812N6-CPA-TB-E

2SC2812N6-CPA-TB-E

2SC2812N6-CPA-TB-E

ON Semiconductor

2SC2812N6-CPA-TB-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SC2812N6-CPA-TB-E Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status LIFETIME (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Max Power Dissipation 200mW
Pin Count 3
Power - Max 200mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 50V
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) 55V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.266428 $0.266428
10 $0.251347 $2.51347
100 $0.237120 $23.712
500 $0.223698 $111.849
1000 $0.211036 $211.036
2SC2812N6-CPA-TB-E Product Details

2SC2812N6-CPA-TB-E Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 1mA 6V DC current gain.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 5mA, 50mA.Collector current can be as low as 150mA volts at its maximum.

2SC2812N6-CPA-TB-E Features


the DC current gain for this device is 200 @ 1mA 6V
the vce saturation(Max) is 500mV @ 5mA, 50mA

2SC2812N6-CPA-TB-E Applications


There are a lot of ON Semiconductor 2SC2812N6-CPA-TB-E applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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