ZXTN19100CGTA Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 100mA 2V.The collector emitter saturation voltage is 430mV, giving you a wide variety of design options.When VCE saturation is 430mV @ 550mA, 5.5A, transistor means Ic has reached transistors maximum value (saturated).The emitter base voltage can be kept at 7V for high efficiency.In this part, there is a transition frequency of 150MHz.As a result, it can handle voltages as low as 100V volts.When collector current reaches its maximum, it can reach 5.5A volts.

ZXTN19100CGTA Features

the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 430mV
the vce saturation(Max) is 430mV @ 550mA, 5.5A
the emitter base voltage is kept at 7V
a transition frequency of 150MHz

ZXTN19100CGTA Applications

There are a lot of Diodes Incorporated ZXTN19100CGTA applications of single BJT transistors.

• Muting
• Interface
• Inverter
• Driver