ZXTN2005ZTA Overview

In this device, the DC current gain is 300 @ 1A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As it features a collector emitter saturation voltage of 200mV, it allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 200mV @ 150mA, 6.5A.Continuous collector voltage should be kept at 5.5A for high efficiency.Keeping the emitter base voltage at 7V can result in a high level of efficiency.The current rating of this fuse is 5.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.150MHz is present in the transition frequency.A breakdown input voltage of 25V volts can be used.A maximum collector current of 5.5A volts can be achieved.

ZXTN2005ZTA Features

the DC current gain for this device is 300 @ 1A 1V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 150mA, 6.5A
the emitter base voltage is kept at 7V
the current rating of this device is 5.5A
a transition frequency of 150MHz

ZXTN2005ZTA Applications

There are a lot of Diodes Incorporated ZXTN2005ZTA applications of single BJT transistors.

• Interface
• Muting
• Driver
• Inverter