PBSS5360XX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBSS5360XX Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-243AA
Operating Temperature
-55°C~150°C TA
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Pin Count
3
Power - Max
1.35W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 3A 5V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
550mV @ 3A, 300mA
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
3A
Frequency - Transition
65MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,000
$0.11475
$0.11475
2,000
$0.10455
$0.2091
5,000
$0.09945
$0.49725
10,000
$0.09180
$0.918
25,000
$0.08670
$2.1675
50,000
$0.08415
$4.2075
PBSS5360XX Product Details
PBSS5360XX Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 80 @ 3A 5V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.This device displays a 60V maximum voltage - Collector Emitter Breakdown.
PBSS5360XX Features
the DC current gain for this device is 80 @ 3A 5V the vce saturation(Max) is 550mV @ 3A, 300mA
PBSS5360XX Applications
There are a lot of Nexperia USA Inc. PBSS5360XX applications of single BJT transistors.