PBSS5360XX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBSS5360XX Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-243AA
Operating Temperature
-55°C~150°C TA
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Pin Count
3
Power - Max
1.35W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 3A 5V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
550mV @ 3A, 300mA
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
3A
Frequency - Transition
65MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
PBSS5360XX Product Details
PBSS5360XX Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 80 @ 3A 5V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.This device displays a 60V maximum voltage - Collector Emitter Breakdown.
PBSS5360XX Features
the DC current gain for this device is 80 @ 3A 5V the vce saturation(Max) is 550mV @ 3A, 300mA
PBSS5360XX Applications
There are a lot of Nexperia USA Inc. PBSS5360XX applications of single BJT transistors.