BC559CTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BC559CTA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 5 days ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins
3
Weight
240mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
LOW NOISE
Subcategory
Other Transistors
Voltage - Rated DC
-30V
Max Power Dissipation
500mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
-100mA
Frequency
150MHz
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BC559
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
500mW
Transistor Application
SWITCHING
Gain Bandwidth Product
150MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
420 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
30V
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
-250mV
Max Breakdown Voltage
30V
Collector Base Voltage (VCBO)
-30V
Emitter Base Voltage (VEBO)
-5V
hFE Min
110
Height
5.33mm
Length
5.2mm
Width
4.19mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,000
$0.04208
$0.08416
6,000
$0.03679
$0.22074
10,000
$0.03150
$0.315
50,000
$0.02797
$1.3985
100,000
$0.02503
$2.503
BC559CTA Product Details
BC559CTA Overview
This device has a DC current gain of 420 @ 2mA 5V, which is the ratio between the collector current and the base current.This design offers maximum flexibility with a collector emitter saturation voltage of -250mV.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at -5V allows for a high level of efficiency.This device has a current rating of -100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Parts of this part have transition frequencies of 150MHz.Breakdown input voltage is 30V volts.Maximum collector currents can be below 100mA volts.
BC559CTA Features
the DC current gain for this device is 420 @ 2mA 5V a collector emitter saturation voltage of -250mV the vce saturation(Max) is 650mV @ 5mA, 100mA the emitter base voltage is kept at -5V the current rating of this device is -100mA a transition frequency of 150MHz
BC559CTA Applications
There are a lot of ON Semiconductor BC559CTA applications of single BJT transistors.