BDX33BG Overview

In this device, the DC current gain is 750 @ 3A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As it features a collector emitter saturation voltage of 2.5V, it allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.5V @ 6mA, 3A.An emitter's base voltage can be kept at 5V to gain high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 10A.A transition frequency of 3MHz is present in the part.A maximum collector current of 10A volts can be achieved.

BDX33BG Features

the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 6mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 3MHz

BDX33BG Applications

There are a lot of ON Semiconductor BDX33BG applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter