KSD471ACYBU Overview

This device has a DC current gain of 120 @ 100mA 1V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 100mA, 1A.Emitter base voltages of 5V can achieve high levels of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1A.Single BJT transistor contains a transSingle BJT transistorion frequency of 130MHz.A maximum collector current of 1A volts is possible.

KSD471ACYBU Features

the DC current gain for this device is 120 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 130MHz

KSD471ACYBU Applications

There are a lot of ON Semiconductor KSD471ACYBU applications of single BJT transistors.

• Driver
• Muting
• Interface
• Inverter