BC638 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 150mA 2V.This design offers maximum flexibility with a collector emitter saturation voltage of -500mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -1A current rating.This device can take an input voltage of 60V volts before it breaks down.Product comes in TO-92-3 supplier package.The device exhibits a collector-emitter breakdown at 60V.When collector current reaches its maximum, it can reach 500mA volts.
BC638 Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
the supplier device package of TO-92-3
BC638 Applications
There are a lot of ON Semiconductor BC638 applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
