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ZXTN25040DZTA

ZXTN25040DZTA

ZXTN25040DZTA

Diodes Incorporated

ZXTN25040DZTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXTN25040DZTA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 51.993025mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 4.46W
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 190MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZXTN25040D
Pin Count 3
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element Configuration Single
Power Dissipation 4.46W
Case Connection COLLECTOR
Power - Max 2.4W
Transistor Application SWITCHING
Gain Bandwidth Product 190MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 10mA 2V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 260mV @ 500mA, 5A
Collector Emitter Breakdown Voltage 40V
Transition Frequency 190MHz
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 130V
Emitter Base Voltage (VEBO) 7V
Height 1.6mm
Length 4.6mm
Width 2.6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.504000 $0.504
10 $0.475472 $4.75472
100 $0.448558 $44.8558
500 $0.423168 $211.584
1000 $0.399215 $399.215
ZXTN25040DZTA Product Details

ZXTN25040DZTA Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 10mA 2V DC current gain.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 260mV @ 500mA, 5A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.In this part, there is a transition frequency of 190MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.

ZXTN25040DZTA Features


the DC current gain for this device is 300 @ 10mA 2V
the vce saturation(Max) is 260mV @ 500mA, 5A
the emitter base voltage is kept at 7V
a transition frequency of 190MHz

ZXTN25040DZTA Applications


There are a lot of Diodes Incorporated ZXTN25040DZTA applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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