ZXTN25040DZTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXTN25040DZTA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Weight
51.993025mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Max Power Dissipation
4.46W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
190MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZXTN25040D
Pin Count
3
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Element Configuration
Single
Power Dissipation
4.46W
Case Connection
COLLECTOR
Power - Max
2.4W
Transistor Application
SWITCHING
Gain Bandwidth Product
190MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 10mA 2V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
260mV @ 500mA, 5A
Collector Emitter Breakdown Voltage
40V
Transition Frequency
190MHz
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
130V
Emitter Base Voltage (VEBO)
7V
Height
1.6mm
Length
4.6mm
Width
2.6mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.504000
$0.504
10
$0.475472
$4.75472
100
$0.448558
$44.8558
500
$0.423168
$211.584
1000
$0.399215
$399.215
ZXTN25040DZTA Product Details
ZXTN25040DZTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 10mA 2V DC current gain.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 260mV @ 500mA, 5A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.In this part, there is a transition frequency of 190MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
ZXTN25040DZTA Features
the DC current gain for this device is 300 @ 10mA 2V the vce saturation(Max) is 260mV @ 500mA, 5A the emitter base voltage is kept at 7V a transition frequency of 190MHz
ZXTN25040DZTA Applications
There are a lot of Diodes Incorporated ZXTN25040DZTA applications of single BJT transistors.