BC807-25LVL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
BC807-25LVL Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2018
Series
Automotive, AEC-Q101
Part Status
Active
Power - Max
250mW
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
500mA
Frequency - Transition
80MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.031127
$0.031127
500
$0.022887
$11.4435
1000
$0.019073
$19.073
2000
$0.017499
$34.998
5000
$0.016354
$81.77
10000
$0.015213
$152.13
15000
$0.014712
$220.68
50000
$0.014466
$723.3
BC807-25LVL Product Details
BC807-25LVL Overview
DC current gain in this device equals 160 @ 100mA 1V, which is the ratio of the base current to the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
BC807-25LVL Features
the DC current gain for this device is 160 @ 100mA 1V the vce saturation(Max) is 700mV @ 50mA, 500mA
BC807-25LVL Applications
There are a lot of Nexperia USA Inc. BC807-25LVL applications of single BJT transistors.