PMST2369,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PMST2369,115 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
500MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
PMST2369
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
200mW
Transistor Application
SWITCHING
Gain Bandwidth Product
500MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
15V
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 10mA 1V
Current - Collector Cutoff (Max)
400nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage
15V
Transition Frequency
500MHz
Max Breakdown Voltage
15V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
5V
hFE Min
40
Collector-Base Capacitance-Max
4pF
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.020246
$0.020246
500
$0.014888
$7.444
1000
$0.012406
$12.406
2000
$0.011381
$22.762
5000
$0.010637
$53.185
10000
$0.009895
$98.95
15000
$0.009570
$143.55
50000
$0.009410
$470.5
PMST2369,115 Product Details
PMST2369,115 Overview
In this device, the DC current gain is 40 @ 10mA 1V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 1mA, 10mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.As a result, the part has a transition frequency of 500MHz.Single BJT transistor can be broken down at a voltage of 15V volts.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
PMST2369,115 Features
the DC current gain for this device is 40 @ 10mA 1V the vce saturation(Max) is 250mV @ 1mA, 10mA the emitter base voltage is kept at 5V a transition frequency of 500MHz
PMST2369,115 Applications
There are a lot of Nexperia USA Inc. PMST2369,115 applications of single BJT transistors.