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PMST2369,115

PMST2369,115

PMST2369,115

Nexperia USA Inc.

PMST2369,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PMST2369,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 500MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number PMST2369
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 200mW
Transistor Application SWITCHING
Gain Bandwidth Product 500MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 15V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 10mA 1V
Current - Collector Cutoff (Max) 400nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 15V
Transition Frequency 500MHz
Max Breakdown Voltage 15V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 5V
hFE Min 40
Collector-Base Capacitance-Max 4pF
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.020246 $0.020246
500 $0.014888 $7.444
1000 $0.012406 $12.406
2000 $0.011381 $22.762
5000 $0.010637 $53.185
10000 $0.009895 $98.95
15000 $0.009570 $143.55
50000 $0.009410 $470.5
PMST2369,115 Product Details

PMST2369,115 Overview


In this device, the DC current gain is 40 @ 10mA 1V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 1mA, 10mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.As a result, the part has a transition frequency of 500MHz.Single BJT transistor can be broken down at a voltage of 15V volts.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.

PMST2369,115 Features


the DC current gain for this device is 40 @ 10mA 1V
the vce saturation(Max) is 250mV @ 1mA, 10mA
the emitter base voltage is kept at 5V
a transition frequency of 500MHz

PMST2369,115 Applications


There are a lot of Nexperia USA Inc. PMST2369,115 applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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