2N5337

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Manufacturer part number:2N5337

Manufacturer:Microsemi Corporation

Description:2N5337 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

Case Package:SOT-23

Datasheet:2N5337 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Through Hole
Package / Case	TO-39
Number of Pins	3
Transistor Element Material	SILICON
Published	2007
JESD-609 Code	e0
Pbfree Code	no
Part Status	Active
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
Subcategory	Other Transistors
Max Power Dissipation	6W
Terminal Position	BOTTOM
Terminal Form	WIRE
Operating Temperature (Max)	200°C
Number of Elements	1
Polarity	NPN
Configuration	SINGLE
Power Dissipation	6W
Transistor Application	SWITCHING
Collector Emitter Voltage (VCEO)	80V
Max Collector Current	5A
Transition Frequency	30MHz
Collector Base Voltage (VCBO)	80V
Emitter Base Voltage (VEBO)	6V
DC Current Gain-Min (hFE)	40
Turn Off Time-Max (toff)	2200ns
Turn On Time-Max (ton)	200ns
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant