ZXTN25050DFHTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXTN25050DFHTA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated DC
50V
Max Power Dissipation
1.25W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
4A
Frequency
200MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZXTN25050
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.81W
Transistor Application
SWITCHING
Gain Bandwidth Product
200MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 10mA 2V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
210mV @ 400mA, 4A
Collector Emitter Breakdown Voltage
50V
Transition Frequency
200MHz
Collector Emitter Saturation Voltage
260mV
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
150V
Emitter Base Voltage (VEBO)
7V
hFE Min
300
Continuous Collector Current
4A
Height
1mm
Length
3.05mm
Width
1.4mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.066067
$2.066067
10
$1.949120
$19.4912
100
$1.838792
$183.8792
500
$1.734710
$867.355
1000
$1.636519
$1636.519
ZXTN25050DFHTA Product Details
ZXTN25050DFHTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 10mA 2V DC current gain.As it features a collector emitter saturation voltage of 260mV, it allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 210mV @ 400mA, 4A.Maintaining the continuous collector voltage at 4A is essential for high efficiency.An emitter's base voltage can be kept at 7V to gain high efficiency.This device has a current rating of 4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In this part, there is a transition frequency of 200MHz.Input voltage breakdown is available at 50V volts.When collector current reaches its maximum, it can reach 4A volts.
ZXTN25050DFHTA Features
the DC current gain for this device is 300 @ 10mA 2V a collector emitter saturation voltage of 260mV the vce saturation(Max) is 210mV @ 400mA, 4A the emitter base voltage is kept at 7V the current rating of this device is 4A a transition frequency of 200MHz
ZXTN25050DFHTA Applications
There are a lot of Diodes Incorporated ZXTN25050DFHTA applications of single BJT transistors.