ZXTN25050DFHTA Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 10mA 2V DC current gain.As it features a collector emitter saturation voltage of 260mV, it allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 210mV @ 400mA, 4A.Maintaining the continuous collector voltage at 4A is essential for high efficiency.An emitter's base voltage can be kept at 7V to gain high efficiency.This device has a current rating of 4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In this part, there is a transition frequency of 200MHz.Input voltage breakdown is available at 50V volts.When collector current reaches its maximum, it can reach 4A volts.

ZXTN25050DFHTA Features

the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of 260mV
the vce saturation(Max) is 210mV @ 400mA, 4A
the emitter base voltage is kept at 7V
the current rating of this device is 4A
a transition frequency of 200MHz

ZXTN25050DFHTA Applications

There are a lot of Diodes Incorporated ZXTN25050DFHTA applications of single BJT transistors.

• Muting
• Interface
• Inverter
• Driver