ZXTN4004ZQTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXTN4004ZQTA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2015
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Max Power Dissipation
2W
Terminal Position
SINGLE
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Reference Standard
AEC-Q101
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
2W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
250mV
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 250mV
Current - Collector Cutoff (Max)
50nA
Vce Saturation (Max) @ Ib, Ic
250mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
150V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.136235
$1.136235
10
$1.071920
$10.7192
100
$1.011245
$101.1245
500
$0.954005
$477.0025
1000
$0.900005
$900.005
ZXTN4004ZQTA Product Details
ZXTN4004ZQTA Overview
In this device, the DC current gain is 100 @ 150mA 250mV, which is the ratio between the base current and the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A maximum collector current of 1A volts is possible.
ZXTN4004ZQTA Features
the DC current gain for this device is 100 @ 150mA 250mV the vce saturation(Max) is 250mV @ 5mA, 100mA
ZXTN4004ZQTA Applications
There are a lot of Diodes Incorporated ZXTN4004ZQTA applications of single BJT transistors.