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BCW29,215

  • BCW29,215
  • BCW29,215

BCW29,215

BCW29,215

Nexperia USA Inc.

BCW29,215 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BCW29,215 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation 250mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BCW29
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 250mW
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 32V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 150mV @ 2.5mA, 50mA
Collector Emitter Breakdown Voltage 32V
Transition Frequency 100MHz
Collector Base Voltage (VCBO) 32V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.055695 $0.055695
500 $0.040953 $20.4765
1000 $0.034127 $34.127
2000 $0.031309 $62.618
5000 $0.029261 $146.305
10000 $0.027220 $272.2
15000 $0.026324 $394.86
50000 $0.025885 $1294.25
BCW29,215 Product Details

BCW29,215 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 2mA 5V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The base voltage of the emitter can be kept at 5V to achieve high efficiency.100MHz is present in the transition frequency.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.

BCW29,215 Features


the DC current gain for this device is 120 @ 2mA 5V
the vce saturation(Max) is 150mV @ 2.5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BCW29,215 Applications


There are a lot of Nexperia USA Inc. BCW29,215 applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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