ZXTN4240F-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXTN4240F-7 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
730mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 1A 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
320mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
2A
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.132120
$0.13212
10
$0.124642
$1.24642
100
$0.117586
$11.7586
500
$0.110930
$55.465
1000
$0.104651
$104.651
ZXTN4240F-7 Product Details
ZXTN4240F-7 Overview
In this device, the DC current gain is 300 @ 1A 2V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 320mV @ 200mA, 2A.Collector Emitter Breakdown occurs at 40VV - Maximum voltage.
ZXTN4240F-7 Features
the DC current gain for this device is 300 @ 1A 2V the vce saturation(Max) is 320mV @ 200mA, 2A
ZXTN4240F-7 Applications
There are a lot of Diodes Incorporated ZXTN4240F-7 applications of single BJT transistors.