BCX51H6327XTSA1 Overview

This device has a DC current gain of 40 @ 150mA 2V, which is the ratio between the collector current and the base current.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.During maximum operation, collector current can be as low as 1A volts.

BCX51H6327XTSA1 Features

the DC current gain for this device is 40 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V

BCX51H6327XTSA1 Applications

There are a lot of Infineon Technologies BCX51H6327XTSA1 applications of single BJT transistors.

• Driver
• Muting
• Inverter
• Interface