BUL39D Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 10mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.1V, which allows maximum flexibilSingle BJT transistory in design.When VCE saturation is 1.1V @ 500mA, 2.5A, transistor means Ic has reached transistors maximum value (saturated).If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 4A.In extreme cases, the collector current can be as low as 4A volts.

BUL39D Features

the DC current gain for this device is 10 @ 10mA 5V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 500mA, 2.5A
the emitter base voltage is kept at 9V
the current rating of this device is 4A

BUL39D Applications

There are a lot of STMicroelectronics BUL39D applications of single BJT transistors.

• Driver
• Muting
• Inverter
• Interface