DXT5551P5-13 Overview

This device has a DC current gain of 80 @ 10mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 200mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is recommended to keep the continuous collector voltage at 600mA in order to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.The part has a transition frequency of 130MHz.Breakdown input voltage is 160V volts.When collector current reaches its maximum, it can reach 600mA volts.

DXT5551P5-13 Features

the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 130MHz

DXT5551P5-13 Applications

There are a lot of Diodes Incorporated DXT5551P5-13 applications of single BJT transistors.

• Driver
• Interface
• Inverter
• Muting