DXT5551P5-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DXT5551P5-13 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
PowerDI™ 5
Number of Pins
5
Weight
95.991485mg
Transistor Element Material
SILICON
Manufacturer Package Identifier
POWERDI-5
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2016
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Max Power Dissipation
2.25W
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
130MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
DXT5551
Pin Count
4
JESD-30 Code
R-PDSO-F3
Number of Elements
1
Element Configuration
Single
Power Dissipation
2.25W
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Gain Bandwidth Product
130MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
160V
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA 5V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
160V
Transition Frequency
130MHz
Collector Emitter Saturation Voltage
200mV
Max Breakdown Voltage
160V
Collector Base Voltage (VCBO)
180V
Emitter Base Voltage (VEBO)
6V
Continuous Collector Current
600mA
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.290864
$0.290864
10
$0.274400
$2.744
100
$0.258868
$25.8868
500
$0.244215
$122.1075
1000
$0.230392
$230.392
DXT5551P5-13 Product Details
DXT5551P5-13 Overview
This device has a DC current gain of 80 @ 10mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 200mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is recommended to keep the continuous collector voltage at 600mA in order to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.The part has a transition frequency of 130MHz.Breakdown input voltage is 160V volts.When collector current reaches its maximum, it can reach 600mA volts.
DXT5551P5-13 Features
the DC current gain for this device is 80 @ 10mA 5V a collector emitter saturation voltage of 200mV the vce saturation(Max) is 200mV @ 5mA, 50mA the emitter base voltage is kept at 6V a transition frequency of 130MHz
DXT5551P5-13 Applications
There are a lot of Diodes Incorporated DXT5551P5-13 applications of single BJT transistors.