ZXTP03200BZTA Overview

This device has a DC current gain of 100 @ 1A 5V, which is the ratio between the collector current and the base current.This design offers maximum flexibility with a collector emitter saturation voltage of 260mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 260mV @ 400mA, 2A.Continuous collector voltage should be kept at 2A for high efficiency.Emitter base voltages of 7V can achieve high levels of efficiency.In the part, the transition frequency is 105MHz.An input voltage of 200V volts is the breakdown voltage.The maximum collector current is 2A volts.

ZXTP03200BZTA Features

the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of 260mV
the vce saturation(Max) is 260mV @ 400mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 105MHz

ZXTP03200BZTA Applications

There are a lot of Diodes Incorporated ZXTP03200BZTA applications of single BJT transistors.

• Inverter
• Muting
• Interface
• Driver