NSS20200W6T1G Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 215mV @ 20mA, 2A.With the emitter base voltage set at 7V, an efficient operation can be achieved.In this part, there is a transition frequency of 100MHz.The breakdown input voltage is 20V volts.In extreme cases, the collector current can be as low as 2A volts.

NSS20200W6T1G Features

the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 215mV @ 20mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 100MHz

NSS20200W6T1G Applications

There are a lot of ON Semiconductor NSS20200W6T1G applications of single BJT transistors.

• Muting
• Inverter
• Driver
• Interface