KSA643YTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSA643YTA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 week ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins
3
Weight
240mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-20V
Max Power Dissipation
500mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
-500mA
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
KSA643
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
500mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 100mA 1V
Current - Collector Cutoff (Max)
200nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
20V
Collector Emitter Saturation Voltage
-300mV
Max Breakdown Voltage
20V
Collector Base Voltage (VCBO)
-40V
Emitter Base Voltage (VEBO)
-5V
hFE Min
40
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.256690
$0.25669
10
$0.242160
$2.4216
100
$0.228453
$22.8453
500
$0.215522
$107.761
1000
$0.203322
$203.322
KSA643YTA Product Details
KSA643YTA Overview
In this device, the DC current gain is 120 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As it features a collector emitter saturation voltage of -300mV, it allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 50mA, 500mA.Keeping the emitter base voltage at -5V can result in a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -500mA current rating.A breakdown input voltage of 20V volts can be used.During maximum operation, collector current can be as low as 500mA volts.
KSA643YTA Features
the DC current gain for this device is 120 @ 100mA 1V a collector emitter saturation voltage of -300mV the vce saturation(Max) is 400mV @ 50mA, 500mA the emitter base voltage is kept at -5V the current rating of this device is -500mA
KSA643YTA Applications
There are a lot of ON Semiconductor KSA643YTA applications of single BJT transistors.