ZXTP2013ZTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 1A 1V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -240mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 400mA, 4A.In order to achieve high efficiency, the continuous collector voltage should be kept at -3.5A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.The current rating of this fuse is -3.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.A transition frequency of 125MHz is present in the part.An input voltage of 100V volts is the breakdown voltage.When collector current reaches its maximum, it can reach 3.5A volts.
ZXTP2013ZTA Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -240mV
the vce saturation(Max) is 300mV @ 400mA, 4A
the emitter base voltage is kept at 7V
the current rating of this device is -3.5A
a transition frequency of 125MHz
ZXTP2013ZTA Applications
There are a lot of Diodes Incorporated ZXTP2013ZTA applications of single BJT transistors.
- Inverter
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- Muting
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- Driver
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- Interface
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