BCW68GVL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
BCW68GVL Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2017
Series
Automotive, AEC-Q101
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Pin Count
3
Power - Max
250mW
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 100mA 1V
Current - Collector Cutoff (Max)
5μA ICBO
Vce Saturation (Max) @ Ib, Ic
450mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
800mA
Frequency - Transition
80MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.164000
$0.164
10
$0.154717
$1.54717
100
$0.145959
$14.5959
500
$0.137698
$68.849
1000
$0.129903
$129.903
BCW68GVL Product Details
BCW68GVL Overview
DC current gain in this device equals 160 @ 100mA 1V, which is the ratio of the base current to the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 450mV @ 50mA, 500mA.The device has a 45V maximal voltage - Collector Emitter Breakdown.
BCW68GVL Features
the DC current gain for this device is 160 @ 100mA 1V the vce saturation(Max) is 450mV @ 50mA, 500mA
BCW68GVL Applications
There are a lot of Nexperia USA Inc. BCW68GVL applications of single BJT transistors.