BCW68GVL

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Manufacturer part number:BCW68GVL

Manufacturer:Nexperia USA Inc.

Description:BCW68GVL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

Case Package:SOT-23

Datasheet:BCW68GVL Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2017
Series	Automotive, AEC-Q101
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Pin Count	3
Power - Max	250mW
Transistor Type	PNP
DC Current Gain (hFE) (Min) @ Ic, Vce	160 @ 100mA 1V
Current - Collector Cutoff (Max)	5μA ICBO
Vce Saturation (Max) @ Ib, Ic	450mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)	45V
Current - Collector (Ic) (Max)	800mA
Frequency - Transition	80MHz
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$0.164000	$0.164
10	$0.154717	$1.54717
100	$0.145959	$14.5959
500	$0.137698	$68.849
1000	$0.129903	$129.903

BCW68GVL Overview

DC current gain in this device equals 160 @ 100mA 1V, which is the ratio of the base current to the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 450mV @ 50mA, 500mA.The device has a 45V maximal voltage - Collector Emitter Breakdown.