ZXTP2041FTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXTP2041FTA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
Other Transistors
Voltage - Rated DC
-40V
Max Power Dissipation
350mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-1A
Frequency
150MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZXTP2041
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
350mW
Transistor Application
SWITCHING
Gain Bandwidth Product
150MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
40V
Transition Frequency
300MHz
Collector Emitter Saturation Voltage
-500mV
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
5V
Height
1mm
Length
2.9mm
Width
1.3mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.292475
$0.292475
10
$0.275920
$2.7592
100
$0.260302
$26.0302
500
$0.245568
$122.784
1000
$0.231668
$231.668
ZXTP2041FTA Product Details
ZXTP2041FTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 300 @ 100mA 5V.A collector emitter saturation voltage of -500mV allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 1A.Emitter base voltages of 5V can achieve high levels of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -1A current rating.300MHz is present in the transition frequency.There is a breakdown input voltage of 40V volts that it can take.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
ZXTP2041FTA Features
the DC current gain for this device is 300 @ 100mA 5V a collector emitter saturation voltage of -500mV the vce saturation(Max) is 500mV @ 100mA, 1A the emitter base voltage is kept at 5V the current rating of this device is -1A a transition frequency of 300MHz
ZXTP2041FTA Applications
There are a lot of Diodes Incorporated ZXTP2041FTA applications of single BJT transistors.