2N6290 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
2N6290 PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
22 Weeks
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
40W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 2.5A 4V
Current - Collector Cutoff (Max)
1mA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
3.5V @ 3A, 7A
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
7A
Transition Frequency
4MHz
Frequency - Transition
4MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.680000
$1.68
10
$1.584906
$15.84906
100
$1.495194
$149.5194
500
$1.410560
$705.28
1000
$1.330717
$1330.717
2N6290 PBFREE Product Details
2N6290 PBFREE Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 2.5A 4V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3.5V @ 3A, 7A.Parts of this part have transition frequencies of 4MHz.Collector Emitter Breakdown occurs at 50VV - Maximum voltage.
2N6290 PBFREE Features
the DC current gain for this device is 30 @ 2.5A 4V the vce saturation(Max) is 3.5V @ 3A, 7A a transition frequency of 4MHz
2N6290 PBFREE Applications
There are a lot of Central Semiconductor Corp 2N6290 PBFREE applications of single BJT transistors.